PART |
Description |
Maker |
K4D623238B-GQC |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
|
Samsung Electronic
|
HI-8787 HI-8787PQI HI-8787PQT HI-8788 HI-8788PQI H |
16 Bit Parallel data converted to 429 and 561 serial data out ARINC INTERFACE DEVICE 16-BIT PARALLEL DATA CONVERTED 429&561 SERIAL DATA OUT 512 MACROCELL 3.3 VOLT ZERO POWER ISP CP - NOT RECOMMENDED for NEW DESIGN
|
HOLTIC[Holt Integrated Circuits]
|
M13S2561616A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
R2705E |
27.195MHz FSK Radio Data Receiver for Manchester Data Format
|
List of Unclassifed Manufacturers
|
K4E661612EK4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet
|
Samsung Electronic
|
W9751G6KB-18 W9751G6KB-25 W9751G6KB-3 W9751G6KB25A |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
RC336DPI RCV336DPI |
V.34 Data V.17 Fax, Modem Data Pump .34数据.17传真,数据传输泵
|
List of Unclassifed Manufacturers Electronic Theatre Controls, Inc. ETC
|
M13S5121632A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
HI-8787 |
(HI-8787 / HI-8788) 16-BIT PARALLEL DATA CONVERTED 429&561 SERIAL DATA OUT
|
Holt Integrated Circuits
|
HI-8783 |
(HI-8783 - HI-8785) 8 bit parallel data converted to 429 & 561 serial data out
|
Holt Integrated Circuits
|
NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6 |
1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NanoAmp Solutions, Inc.
|
K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|